Dimer Coupling Energies of the Si(001) Surface

Christian Brand, Alfred Hucht, Giriraj Jnawali, Jonas D. Fortmann, Björn Sothmann, Hamid Mehdipour, Peter Kratzer, Ralf Schützhold, and Michael Horn-von Hoegen
Phys. Rev. Lett. 130, 126203 – Published 23 March 2023

Abstract

The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justified by the large ratio of correlation lengths, ξ+/ξ+=5.2 of the fluctuating c(4×2) domains above the critical temperature Tc=(190.6±10)K. We obtain effective couplings J=(24.9±1.3)meV along the dimer rows and J=(0.8±0.1)meV across the dimer rows, i.e., antiferromagneticlike coupling of the dimers with c(4×2) symmetry.

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  • Received 19 May 2022
  • Accepted 2 February 2023

DOI:https://doi.org/10.1103/PhysRevLett.130.126203

© 2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Christian Brand1,*, Alfred Hucht1,2, Giriraj Jnawali1,†, Jonas D. Fortmann1, Björn Sothmann1,2, Hamid Mehdipour1, Peter Kratzer1,2, Ralf Schützhold3,4, and Michael Horn-von Hoegen1,2

  • 1Faculty of Physics, University of Duisburg-Essen, 47057 Duisburg, Germany
  • 2Center for Nanointegration (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
  • 3Institute of Theoretical Physics, Dresden University of Technology, 01062 Dresden, Germany
  • 4Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany

  • *Corresponding author. christian.brand@uni-due.de
  • Present address: Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221, USA.

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Issue

Vol. 130, Iss. 12 — 24 March 2023

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