Intrinsic Anomalous Hall Effect in a Bosonic Chiral Superfluid

Guan-Hua Huang, Zhi-Fang Xu, and Zhigang Wu
Phys. Rev. Lett. 129, 185301 – Published 28 October 2022
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Abstract

The anomalous Hall effect has had a profound influence on the understanding of many electronic topological materials but is much less studied in their bosonic counterparts. We predict that an intrinsic anomalous Hall effect exists in a recently realized bosonic chiral superfluid, a p-orbital Bose-Einstein condensate in a 2D hexagonal boron nitride optical lattice [Wang et al., Nature (London) 596, 227 (2021)]. We evaluate the frequency-dependent Hall conductivity within a multi-orbital Bose-Hubbard model that accurately captures the real experimental system. We find that in the high frequency limit, the Hall conductivity is determined by finite loop current correlations on the s-orbital residing sublattice, the latter a defining feature of the system’s chirality. In the opposite limit, the dc Hall conductivity can trace its origin back to the noninteracting band Berry curvature at the condensation momentum, although the contribution from atomic interactions can be significant. We discuss available experimental probes to observe this intrinsic anomalous Hall effect at both zero and finite frequencies.

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  • Received 4 July 2022
  • Revised 25 August 2022
  • Accepted 11 October 2022

DOI:https://doi.org/10.1103/PhysRevLett.129.185301

© 2022 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & OpticalCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Guan-Hua Huang1,2, Zhi-Fang Xu1,2,3,4,*, and Zhigang Wu2,3,4,†

  • 1Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
  • 2Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
  • 3International Quantum Academy, Shenzhen 518048, China
  • 4Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China

  • *xuzf@sustech.edu.cn
  • wuzg@sustech.edu.cn

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Issue

Vol. 129, Iss. 18 — 28 October 2022

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