Interacting random-field dipole defect model for heating in semiconductor-based qubit devices

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Interacting random-field dipole defect model for heating in semiconductor-based qubit devices

Yujun Choi and Robert Joynt

Phys. Rev. Research 6, 013168 – Published 14 February 2024

Abstract

Semiconductor qubit devices suffer from the drift of important device parameters as they are operated. The most important example is a shift in qubit operating frequencies. This effect appears to be directly related to the heating of the system as gate operations are applied. We show that the main features of this phenomenon can be explained by the two-level systems that can also produce charge noise if these systems are considered to form an interacting random-field glass. The most striking feature of the theory is that the frequency shift can be nonmonotonic in temperature. The success of the theory and the questions it raises considerably narrow the possible models for the two-level systems.

Received 4 August 2023
Revised 10 January 2024
Accepted 17 January 2024

DOI:https://doi.org/10.1103/PhysRevResearch.6.013168

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Defects Dielectric properties Quantum computation Quantum control

Quantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Yujun Choi and Robert Joynt ^*

Department of Physics, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA

^*rjjoynt@wisc.edu

Article Text

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Issue

Vol. 6, Iss. 1 — February - April 2024

Subject Areas

Condensed Matter Physics

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Images

Figure 1
Temperature dependence of qubit frequency shifts in the trap picture of the TLSs in some representative samples. The shifts are proportional to one component of the equilibrium electric field $〈 F_{q} 〉 (T)$ at the qubit. “Without Int.” and “With Int.” indicate the noninteracting and fully interacting cases, respectively. (a) Both noninteracting and interacting cases show nonmonotonic shifts. (b) Example in which the interaction causes nonmonotonic behavior.
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Figure 2
PIRS data: theory and experiment. The points are measured frequency shifts for six qubits, Q1–Q6, from Ref. [18], and the dashed lines are theoretical fits. The qubits are situated in a one-dimensional array. The fitting procedure is described in detail in the text. The applied magnetic field is assumed to be in the $y$ direction.
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Figure 3
Temperature dependence of qubit frequency shifts in the random dipole picture of the TLSs. The shifts are computed from the equilibrium electric field $〈 F_{q} 〉 (T) - 〈 F_{q} 〉 (T = 0)$ at the position of the qubit for two configurations of the TLSs. “Without Int.” and “With Int.” indicate the noninteracting ( $H_{int} = 0$ ) and fully interacting cases, respectively. (a) Both the noninteracting and interacting cases show nonmonotonic shifts. (b) Example in which the interaction causes nonmonotonic behavior. The applied magnetic field is assumed to be in the $y$ direction.
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Figure 4
Temperature dependence of qubit frequency shifts in the spherical shell picture of the TLSs. The shifts are computed from the equilibrium electric field $〈 F_{q} 〉 (T) - 〈 F_{q} 〉 (T = 0)$ at the position of the qubit for two configurations of the TLSs. “Without Int.” and “With Int.” indicate the noninteracting ( $H_{int} = 0$ ) and fully interacting cases, respectively. (a) Both the noninteracting and interacting cases show nonmonotonic shifts. (b) Example in which interaction causes nonmonotonic behavior. The applied magnetic field is assumed to be in the $y$ direction. Note the change in vertical scale from (a) to (b).
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Figure 5
Temperature dependence of qubit frequency shifts in the trap and random dipole picture of the TLSs. The shifts are computed from the equilibrium electric field $〈 F_{q} 〉 (T) - 〈 F_{q} 〉 (T = 0)$ at the position of the qubit for two configurations of the TLSs. “Without Int.” and “With Int.” indicate the noninteracting ( $H_{int} = 0$ ) and fully interacting cases, respectively. Both the noninteracting and interacting cases show monotonic shifts for the (a) trap and (b) random dipole pictures. The applied magnetic field is assumed to be in the $y$ direction. Note the change in vertical scale from (a) to (b).
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